苏州能讯高能半导体有限公司

About 苏州能讯高能半导体有限公司

Suzhou Gallium Nitride Semiconductor Co., Ltd. is a high-tech enterprise founded by overseas returnees who received support from China's first batch of "Thousand Talents Program". Established in 2007, the company currently has a registered capital of 279 million yuan. Its headquarters are located at No. 18 Chenfeng Road, Kunshan National High-tech Zone, Suzhou, Jiangsu Province, with R&D centers in Xi'an and Nanjing. The company has built China's first factory for Gallium Nitride (GaN) electronic materials and devices in Kunshan High-tech Zone, Suzhou. This factory covers 55 mu, with an initial investment of 380 million yuan and a construction area of 13,000 square meters. It is designed with a production capacity of 6,000 3-inch GaN wafers per year, positioning its technical strength and production scale at the forefront internationally. Gallium Nitride Semiconductor adopts an Integrated Device Manufacturer (IDM) business model, pioneering the research, development, and industrialization of third-generation semiconductor GaN high-efficiency power semiconductor materials and devices in China. Its products cover both the radio frequency (RF) electronics and power electronics fields. The company's microwave devices are characterized by high voltage, high power, high-temperature resistance, wide frequency range, and high gain, offering significant application prospects in wireless communications, radar, and broadband communication. The company's power electronic devices feature high efficiency, high speed, and high junction temperature, with wide applications in industrial control, power supplies, electric vehicles, and solar inverters. These devices can effectively reduce energy conversion system losses by more than 50%, while exponentially reducing equipment size, decreasing the consumption of precious raw materials like copper, and their high-temperature resistance is ideal for saving weight and reducing volume, especially in harsh environments. Gallium Nitride Semiconductor is one of the few companies globally capable of integrating materials, processes, and devices for GaN electronic devices. It has been an industry pioneer in China, producing the first 2000V high-voltage switching power device in 2009, completing the development of China's first 120W GaN power amplifier chip for communication base stations in 2010, and globally releasing industry-leading mass-produced GaN RF microwave devices in 2014. The company maintains its products and technologies in sync with international advanced levels. Simultaneously, leveraging its local advantages, Gallium Nitride Semiconductor can promptly respond to the needs of domestic manufacturers, rapidly developing targeted products. It also assists customers in gaining a deeper understanding of devices, helping them unlock the full potential of these components and develop more competitive equipment products. Gallium Nitride Semiconductor has independently developed GaN material growth, device design, manufacturing processes, packaging, and reliability technologies, holding 41 Chinese invention patents and 14 international invention patents. Its technical level and product indicators have reached international advanced standards. The core team of Gallium Nitride Semiconductor has extensive overseas work experience and enjoys a high reputation in the international GaN technology field, currently holding numerous world records in GaN technology. The company has over 170 employees, with more than 50% holding bachelor's degrees, including 7 overseas-returned PhDs and over 40 Master's degree holders. The company has undertaken major national technology projects such as the "Core High-end Chips and Fundamental Software" major project, the Ministry of Science and Technology's 863 Program, the SME Innovation Fund, and Jiangsu Province's major scientific and technological achievement transformation projects, among other provincial and municipal major science and technology industry projects. The company received the "Eighth China Semiconductor Innovation Products and Technology Award (2013)" selected by three industry associations, including the China Semiconductor Industry Association, and mainstream media. While maintaining technological leadership, Gallium Nitride Semiconductor will also leverage its local advantages to establish timely response, in-depth assistance, and competitiveness-enhancing customer service standards, dedicating itself to serving customers. Gallium Nitride Semiconductor's mission is to become a world-leading supplier of high-energy semiconductor devices.